IXFT24N50Q
IXYS
IXYS
MOSFET N-CH 500V 24A TO268
$0.00
Available to order
Reference Price (USD)
30+
$8.79467
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXFT24N50Q single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXFT24N50Q combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
NXP USA Inc.
PHU78NQ03LT,127
Texas Instruments
TPIC1301DW
Vishay Siliconix
IRL630
Infineon Technologies
IRF7805ZTRPBF-1
NXP USA Inc.
PMFPB6545UP,115
Infineon Technologies
IRF7704
Infineon Technologies
SPD18P06P
Toshiba Semiconductor and Storage
TPCA8120,LQ(CM
Vishay Siliconix
SIS436DN-T1-GE3
onsemi