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IXFT26N100XHV

IXYS
IXFT26N100XHV Preview
IXYS
MOSFET N-CH 1000V 26A TO268HV
$20.57
Available to order
Reference Price (USD)
1+
$14.08000
30+
$11.84000
120+
$10.88000
510+
$9.28000
1,020+
$8.96000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 6V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXFT)
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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