IXGA15N120B
IXYS
IXYS
IGBT 1200V 30A 150W TO263AA
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Reference Price (USD)
50+
$5.31560
Exquisite packaging
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Upgrade your power management systems with the IXGA15N120B Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGA15N120B provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGA15N120B for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Power - Max: 150 W
- Switching Energy: 1.75mJ (off)
- Input Type: Standard
- Gate Charge: 69 nC
- Td (on/off) @ 25°C: 25ns/180ns
- Test Condition: 960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
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