IXGH36N60B3C1
IXYS
IXYS
IGBT 600V 75A 250W TO247
$0.00
Available to order
Reference Price (USD)
1+
$52.25000
10+
$48.86400
30+
$45.19200
120+
$42.36750
Exquisite packaging
Discount
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The IXGH36N60B3C1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXGH36N60B3C1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXGH36N60B3C1 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 390µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 20ns/125ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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