IXGP30N60C2
IXYS
IXYS
IGBT 600V 70A 190W TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXGP30N60C2 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXGP30N60C2 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXGP30N60C2 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
- Power - Max: 190 W
- Switching Energy: 190µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 13ns/70ns
- Test Condition: 400V, 24A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
IXYS
IXXK160N65C4
Infineon Technologies
SGP30N60
onsemi
FGP30N6S2D
IXYS
IXSH40N60A
Infineon Technologies
IKW15T120
Infineon Technologies
IRG4RC10SDTRRP
Fairchild Semiconductor
SGS6N60UFDTU
onsemi
HGTG12N60A4D
STMicroelectronics
STGP18N40LZ
STMicroelectronics