IXGQ20N120BD1
IXYS
IXYS
IGBT 1200V 40A 190W TO3P
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Reference Price (USD)
30+
$4.96133
Exquisite packaging
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Upgrade your power management systems with the IXGQ20N120BD1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGQ20N120BD1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGQ20N120BD1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 190 W
- Switching Energy: 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: 20ns/270ns
- Test Condition: 960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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