IXGR32N90B2D1
IXYS
IXYS
IGBT 900V 47A 160W ISOPLUS247
$0.00
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Reference Price (USD)
30+
$11.79100
Exquisite packaging
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The IXGR32N90B2D1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXGR32N90B2D1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXGR32N90B2D1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 47 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
- Power - Max: 160 W
- Switching Energy: 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 89 nC
- Td (on/off) @ 25°C: 20ns/260ns
- Test Condition: 720V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr): 190 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
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