IXGT45N120
IXYS
IXYS
IGBT 1200V 75A 300W TO268
$0.00
Available to order
Reference Price (USD)
30+
$8.11500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGT45N120 from IXYS is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IXGT45N120 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
- Power - Max: 300 W
- Switching Energy: 14mJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 55ns/370ns
- Test Condition: 960V, 45A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
Related Products
Infineon Technologies
IRG4BC10K
Infineon Technologies
IRG4PC40UDPBF
IXYS
IXGH34N60B2
IXYS
IXGH40N60C2
Infineon Technologies
IRGP4790D-EPBF
IXYS
IXGH36N60B3D4
Infineon Technologies
IRG4PC50KDPBF
Fairchild Semiconductor
FGI3040G2-F085
Infineon Technologies
IKU10N60RBKMA1
Infineon Technologies