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IXKP20N60C5

IXYS
IXKP20N60C5 Preview
IXYS
MOSFET N-CH 600V 20A TO220AB
$0.00
Available to order
Reference Price (USD)
50+
$4.02760
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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