IXTA3N120HV
IXYS
IXYS
MOSFET N-CH 1200V 3A TO263
$8.01
Available to order
Reference Price (USD)
1+
$6.16000
50+
$4.95000
100+
$4.51000
500+
$3.65200
1,000+
$3.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTA3N120HV by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTA3N120HV stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STD13NM60ND
Taiwan Semiconductor Corporation
TSM033NA03CR RLG
onsemi
FDD86369-F085
Infineon Technologies
IRFZ44NLPBF
Infineon Technologies
IRF5305PBF
Infineon Technologies
IRLS4030TRLPBF
Vishay Siliconix
SUM110P06-08L-E3
Rohm Semiconductor
QS6U22TR
Nexperia USA Inc.
PSMN4R3-30BL,118
onsemi