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IXTH30N50L2

IXYS
IXTH30N50L2 Preview
IXYS
MOSFET N-CH 500V 30A TO247
$16.55
Available to order
Reference Price (USD)
1+
$11.33000
30+
$9.52767
120+
$8.75500
510+
$7.46751
1,020+
$7.21000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

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