IXTH50N20
IXYS
IXYS
MOSFET N-CH 200V 50A TO247
$0.00
Available to order
Reference Price (USD)
30+
$9.30567
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTH50N20 from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTH50N20 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
TK4A60DB(STA4,Q,M)
Vishay Siliconix
SI4426DY-T1-GE3
Rohm Semiconductor
RRS075P03TB1
Vishay Siliconix
SIJ484DP-T1-GE3
STMicroelectronics
STL4P2UH7
Panasonic Electronic Components
SK8603180L
Infineon Technologies
IRF7811
Infineon Technologies
IRL3303STRR
Infineon Technologies
IPD30N06S2L-23
onsemi