IXTH68P20T
IXYS
IXYS
MOSFET P-CH 200V 68A TO247
$18.42
Available to order
Reference Price (USD)
1+
$12.61000
30+
$10.60067
120+
$9.74100
510+
$8.30851
1,020+
$8.02200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTH68P20T from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTH68P20T offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Nexperia USA Inc.
BUK7E1R9-40E,127
IXYS
IXTA3N120-TRR
Vishay Siliconix
IRF9Z34PBF-BE3
Infineon Technologies
IPLK70R900P7ATMA1
onsemi
NTLJF4156NT1G
Vishay Siliconix
SIHG22N60AE-GE3
Vishay Siliconix
SI4413ADY-T1-GE3
Texas Instruments
SN74CBT16245DGG
Microchip Technology
APT1001RBVFRG
STMicroelectronics