IXTH86N25T
IXYS
IXYS
MOSFET N-CH 250V 86A TO247
$7.53
Available to order
Reference Price (USD)
1+
$7.53067
500+
$7.4553633
1000+
$7.3800566
1500+
$7.3047499
2000+
$7.2294432
2500+
$7.1541365
Exquisite packaging
Discount
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Upgrade your designs with the IXTH86N25T by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXTH86N25T is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 540W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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