IXTK110N20L2
IXYS
IXYS
MOSFET N-CH 200V 110A TO264
$37.96
Available to order
Reference Price (USD)
1+
$25.70000
25+
$21.84520
100+
$20.30300
500+
$17.99000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTK110N20L2 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTK110N20L2 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
Related Products
Vishay Siliconix
SI8810EDB-T2-E1
Diodes Incorporated
DMN2230U-7
onsemi
NVTFS5116PLTAG
Renesas Electronics America Inc
TBB1002BMTL-E
IXYS
IXFH48N60X3
Vishay Siliconix
SI7415DN-T1-GE3
onsemi
NVD6414ANT4G-VF01
onsemi
EMH1307-TL-H
Renesas Electronics America Inc
BB502MBS-TR-E
Fairchild Semiconductor