IXTP01N100D
IXYS
IXYS
MOSFET N-CH 1000V 100MA TO220AB
$6.49
Available to order
Reference Price (USD)
1+
$4.48000
50+
$3.60000
100+
$3.28000
500+
$2.65600
1,000+
$2.24000
Exquisite packaging
Discount
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The IXTP01N100D from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTP01N100D offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 110Ohm @ 50mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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