Shopping cart

Subtotal: $0.00

IXTP02N50D

IXYS
IXTP02N50D Preview
IXYS
MOSFET N-CH 500V 200MA TO220AB
$6.77
Available to order
Reference Price (USD)
1+
$4.68000
50+
$3.75760
100+
$3.42350
500+
$2.77220
1,000+
$2.33800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
  • Vgs(th) (Max) @ Id: 5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Related Products

Diodes Incorporated

ZXMP6A17E6QTA

Diodes Incorporated

DMN3730UFB4-7B

Infineon Technologies

IRF7469TRPBF

Infineon Technologies

IRFU2405PBF

Renesas Electronics America Inc

NP15P04SLG-E1-AY

Nexperia USA Inc.

PSMNR90-40SSHJ

Diodes Incorporated

DMP10H088SPS-13

Renesas Electronics America Inc

UPA2714GR-E1-A

Top