IXTP1N100
IXYS
IXYS
MOSFET N-CH 1000V 1.5A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$4.12000
50+
$3.30760
100+
$3.01350
500+
$2.44020
1,000+
$2.05800
Exquisite packaging
Discount
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Enhance your electronic projects with the IXTP1N100 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXTP1N100 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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