Shopping cart

Subtotal: $0.00

IXTP1N80

IXYS
IXTP1N80 Preview
IXYS
MOSFET N-CH 800V 750MA TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$2.48000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Related Products

Nexperia USA Inc.

BUK7E04-40A,127

Nexperia USA Inc.

BUK9225-55A,118

Infineon Technologies

IRF6706S2TRPBF

Vishay Siliconix

SI4362BDY-T1-GE3

Infineon Technologies

SPP24N60CFDHKSA1

Vishay Siliconix

IRFIB6N60A

Infineon Technologies

BSP299 E6327

STMicroelectronics

STD2NM60T4

Infineon Technologies

BSL372SNH6327XTSA1

Top