IXTP1R4N60P
IXYS
IXYS
MOSFET N-CH 600V 1.4A TO220AB
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The IXTP1R4N60P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTP1R4N60P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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