IXTP32P20T
IXYS
IXYS
MOSFET P-CH 200V 32A TO220AB
$8.74
Available to order
Reference Price (USD)
50+
$5.40000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXTP32P20T from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXTP32P20T ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRFHM8326TRPBF
Infineon Technologies
IPDD60R080G7XTMA1
onsemi
NTMYS8D0N04CTWG
Vishay Siliconix
SIHG460B-GE3
Infineon Technologies
IPD60R385CPATMA1
onsemi
FDC642P
Infineon Technologies
IAUC100N04S6N015ATMA1
Infineon Technologies
IRLU3110ZPBF
Infineon Technologies
IPB067N08N3GATMA1
Vishay Siliconix