IXTP48N20TM
IXYS
IXYS
MOSFET N-CH 200V 48A TO220
$3.03
Available to order
Reference Price (USD)
1+
$3.03060
500+
$3.000294
1000+
$2.969988
1500+
$2.939682
2000+
$2.909376
2500+
$2.87907
Exquisite packaging
Discount
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Enhance your electronic projects with the IXTP48N20TM single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXTP48N20TM for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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