IXTP70N085T
IXYS
IXYS
MOSFET N-CH 85V 70A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTP70N085T from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTP70N085T offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
BUK9506-75B,127
Infineon Technologies
IRLU3714PBF
onsemi
NTLUS3A90PZCTAG
Infineon Technologies
IRLR8103VTRR
Infineon Technologies
IRFU4105Z
Panasonic Electronic Components
2SK3546J0L
Alpha & Omega Semiconductor Inc.
AON6970_001
Infineon Technologies
IPS118N10N G
Infineon Technologies
IRF5804TRPBF
Infineon Technologies