IXTQ48N65X2M
IXYS
IXYS
DISCRETE MOSFET 48A 650V X2 TO3P
$10.83
Available to order
Reference Price (USD)
1+
$10.82567
500+
$10.7174133
1000+
$10.6091566
1500+
$10.5008999
2000+
$10.3926432
2500+
$10.2843865
Exquisite packaging
Discount
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The IXTQ48N65X2M single MOSFET from IXYS is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IXTQ48N65X2M is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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