IXTQ60N10T
IXYS
IXYS
MOSFET N-CH 100V 60A TO3P
$3.53
Available to order
Reference Price (USD)
1+
$3.53000
500+
$3.4947
1000+
$3.4594
1500+
$3.4241
2000+
$3.3888
2500+
$3.3535
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTQ60N10T by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTQ60N10T stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Diodes Incorporated
DMG3414UQ-7
Diodes Incorporated
DMN2055UW-13
Diodes Incorporated
DMTH4004LPSQ-13
Renesas
2SK3714-S12-AZ
Infineon Technologies
IPT65R040CFD7XTMA1
Renesas Electronics America Inc
2SJ624-T1B-AT
Renesas Electronics America Inc
3SK222-T2-A
IXYS
IXTT6N120-TRL
onsemi
NTMFS008N12MCT1G
Harris Corporation