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IXTQ60N20L2

IXYS
IXTQ60N20L2 Preview
IXYS
MOSFET N-CH 200V 60A TO3P
$18.96
Available to order
Reference Price (USD)
1+
$12.98000
30+
$10.91500
120+
$10.03000
510+
$8.55500
1,020+
$8.26000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3

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