IXTR32P60P
IXYS
IXYS
MOSFET P-CH 600V 18A ISOPLUS247
$20.11
Available to order
Reference Price (USD)
30+
$14.30067
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTR32P60P from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTR32P60P for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SUD19P06-60-E3
Rectron USA
RM185N30DF
onsemi
NVMYS4D1N06CLTWG
Fairchild Semiconductor
SFR9024TF
onsemi
FDD86252
IXYS
IXFP36N30P3
Micro Commercial Co
MCU20N06A-TP
onsemi
FDBL86361-F085
onsemi
FQPF10N60C
Rohm Semiconductor