IXTT140N10P
IXYS
IXYS
MOSFET N-CH 100V 140A TO268
$10.78
Available to order
Reference Price (USD)
1+
$7.40000
30+
$6.06800
120+
$5.47600
510+
$4.58800
1,020+
$4.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTT140N10P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTT140N10P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Renesas Electronics America Inc
2SK1580-T1-A
Microchip Technology
APT20M45SVFRG
onsemi
NVMFS5C450NAFT1G
STMicroelectronics
STF19NM50N
Vishay Siliconix
SUM70030M-GE3
Infineon Technologies
IAUC24N10S5L300ATMA1
NXP USA Inc.
PMV77EN215
Panjit International Inc.
PJP60R390E_T0_00001
Toshiba Semiconductor and Storage
TJ15P04M3,RQ(S
Panjit International Inc.