IXTT30N50L2
IXYS
IXYS
MOSFET N-CH 500V 30A TO268
$17.84
Available to order
Reference Price (USD)
1+
$12.21000
30+
$10.26767
120+
$9.43500
510+
$8.04751
1,020+
$7.77000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTT30N50L2 single MOSFET from IXYS is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IXTT30N50L2 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Vishay Siliconix
IRF520SPBF
Diodes Incorporated
ZVP0545A
Fairchild Semiconductor
FQI9N25CTU
onsemi
FQT1N60CTF-WS
Vishay Siliconix
SIHG80N60EF-GE3
NXP USA Inc.
PMN20EN,115
Infineon Technologies
ISC058N04NM5ATMA1
onsemi
FDMS5672
Infineon Technologies
IPI120N04S402AKSA1
Vishay Siliconix