IXTT60N10
IXYS
IXYS
MOSFET N-CH 100V 60A TO268
$0.00
Available to order
Reference Price (USD)
30+
$10.54500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IXTT60N10 by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTT60N10 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
IXYS
IXTQ30N50P
Infineon Technologies
IRL3103STRR
NXP USA Inc.
PH3855L,115
Infineon Technologies
IPB45N06S409ATMA1
onsemi
NTB75N03L09T4G
Microsemi Corporation
APT12067B2LLG
Vishay Siliconix
SI2303BDS-T1-GE3
onsemi
HUF75842S3S
Alpha & Omega Semiconductor Inc.
AOTF2210L
Alpha & Omega Semiconductor Inc.