IXTV200N10T
IXYS
IXYS
MOSFET N-CH 100V 200A PLUS220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTV200N10T from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXTV200N10T for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
Related Products
onsemi
FQPF27N25T
Infineon Technologies
IPI120N08S404AKSA1
STMicroelectronics
STB15NK50ZT4
Infineon Technologies
IPP80N06S3L-08
Toshiba Semiconductor and Storage
2SK3462(TE16L1,NQ)
Vishay Siliconix
SQ2361EES-T1-GE3
Toshiba Semiconductor and Storage
TK50E08K3,S1X(S
Infineon Technologies
IRFH7882TRPBF
Vishay Siliconix
IRFR9020TR
Infineon Technologies