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IXTY1N80P-TRL

IXYS
IXTY1N80P-TRL Preview
IXYS
MOSFET N-CH 800V 1A TO252
$1.32
Available to order
Reference Price (USD)
1+
$1.31505
500+
$1.3018995
1000+
$1.288749
1500+
$1.2755985
2000+
$1.262448
2500+
$1.2492975
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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