IXXH40N65B4H1
IXYS
IXYS
IGBT 650V 120A 455W TO247AD
$8.62
Available to order
Reference Price (USD)
30+
$6.50067
Exquisite packaging
Discount
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Discover the IXXH40N65B4H1 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXXH40N65B4H1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXXH40N65B4H1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 455 W
- Switching Energy: 1.4mJ (on), 560µJ (off)
- Input Type: Standard
- Gate Charge: 77 nC
- Td (on/off) @ 25°C: 28ns/144ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 120 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
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