IXXN110N65C4H1
IXYS
IXYS
IGBT MOD 650V 210A 750W SOT227B
$30.99
Available to order
Reference Price (USD)
1+
$23.90000
10+
$22.10600
30+
$20.31333
100+
$18.87940
250+
$17.32604
500+
$16.48962
Exquisite packaging
Discount
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The IXXN110N65C4H1 from IXYS exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the IXXN110N65C4H1 in megawatt-level wind turbine converters. With IXYS's proven track record, the IXXN110N65C4H1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 210 A
- Power - Max: 750 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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