IXYA8N250CHV
IXYS
IXYS
IGBT
$14.81
Available to order
Reference Price (USD)
50+
$9.71260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXYA8N250CHV Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYA8N250CHV ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYA8N250CHV for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500 V
- Current - Collector (Ic) (Max): 29 A
- Current - Collector Pulsed (Icm): 70 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
- Power - Max: 280 W
- Switching Energy: 2.6mJ (on), 1.07mJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 11ns/180ns
- Test Condition: 1250V, 8A, 15Ohm, 15V
- Reverse Recovery Time (trr): 5 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
Related Products
Renesas Electronics America Inc
RJP3049DPK-80#T2
IXYS
IXYK100N120C3
onsemi
FGH30N60LSDTU
IXYS
IXYH12N250CV1HV
onsemi
STB1081L3
Alpha & Omega Semiconductor Inc.
AOK20B120D1
Rohm Semiconductor
RGTV60TS65DGC11
STMicroelectronics
STGW19NC60HD
onsemi
STB1081SL3G
STMicroelectronics