IXYN82N120C3H1
IXYS
IXYS
IGBT MOD 1200V 105A 500W SOT227B
$47.98
Available to order
Reference Price (USD)
1+
$38.00000
10+
$35.15000
30+
$32.30000
100+
$30.02000
250+
$27.55000
Exquisite packaging
Discount
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Engineered for excellence, the IXYN82N120C3H1 IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The IXYN82N120C3H1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the IXYN82N120C3H1.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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