IXYP10N65B3D1
IXYS
IXYS
DISC IGBT XPT-GENX3 TO-220AB/FP
$3.05
Available to order
Reference Price (USD)
1+
$3.04523
500+
$3.0147777
1000+
$2.9843254
1500+
$2.9538731
2000+
$2.9234208
2500+
$2.8929685
Exquisite packaging
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The IXYP10N65B3D1 from IXYS is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IXYP10N65B3D1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): 62 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
- Power - Max: 160 W
- Switching Energy: 300µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 20 nC
- Td (on/off) @ 25°C: 17ns/125ns
- Test Condition: 400V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr): 29 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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