IXYP20N120C4
IXYS
IXYS
IGBT DISCRETE TO-220
$13.78
Available to order
Reference Price (USD)
1+
$13.77703
500+
$13.6392597
1000+
$13.5014894
1500+
$13.3637191
2000+
$13.2259488
2500+
$13.0881785
Exquisite packaging
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Upgrade your power management systems with the IXYP20N120C4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYP20N120C4 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYP20N120C4 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 68 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 375 W
- Switching Energy: 4.4mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 44 nC
- Td (on/off) @ 25°C: 14ns/160ns
- Test Condition: 960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 (IXYP)
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