IXYP50N65C3
IXYS
IXYS
IGBT 650V 130A 600W TO220
$7.49
Available to order
Reference Price (USD)
1+
$6.56000
10+
$5.85400
50+
$5.26840
100+
$4.80010
250+
$4.33176
500+
$3.88690
1,000+
$3.27810
2,500+
$3.12200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the IXYP50N65C3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYP50N65C3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 130 A
- Current - Collector Pulsed (Icm): 250 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
- Power - Max: 600 W
- Switching Energy: 1.3mJ (on), 370µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 22ns/80ns
- Test Condition: 400V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
STMicroelectronics
STGFW20V60F
Fairchild Semiconductor
FGB40N6S2
Infineon Technologies
IKW40N60DTPXKSA1
STMicroelectronics
STGB19NC60KT4
Rohm Semiconductor
RGS00TS65HRC11
Infineon Technologies
IGB20N60H3ATMA1
STMicroelectronics
STGB30H60DLLFBAG
STMicroelectronics
STGWT40V60DLF
Microchip Technology
APT70GR120L
Infineon Technologies