IXYT40N120A4HV
IXYS
IXYS
IGBT 1200V 40A GNX4 XPT TO-268HV
$10.41
Available to order
Reference Price (USD)
1+
$10.41433
500+
$10.3101867
1000+
$10.2060434
1500+
$10.1019001
2000+
$9.9977568
2500+
$9.8936135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXYT40N120A4HV Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYT40N120A4HV ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYT40N120A4HV for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 140 A
- Current - Collector Pulsed (Icm): 275 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
- Power - Max: 600 W
- Switching Energy: 2.3mJ (on), 3.75mJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 22ns/204ns
- Test Condition: 600V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXYT)
Related Products
IXYS
IXGP28N60A3
onsemi
FGH40T70SHD-F155
IXYS
IXXH150N60C3
IXYS
IXYK110N120A4
IXYS
IXYH100N65A3
Microchip Technology
APT85GR120B2
onsemi
FGD2736G3-F085
IXYS
IXXH50N60C3D1
Infineon Technologies
IGP20N65H5XKSA1
STMicroelectronics