IXYT85N120A4HV
IXYS
IXYS
IGBT GENX4 1200V 85A TO268HV
$18.96
Available to order
Reference Price (USD)
1+
$18.96000
500+
$18.7704
1000+
$18.5808
1500+
$18.3912
2000+
$18.2016
2500+
$18.012
Exquisite packaging
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The IXYT85N120A4HV by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXYT85N120A4HV delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXYT85N120A4HV into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Current - Collector Pulsed (Icm): 520 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
- Power - Max: 1150 W
- Switching Energy: 4.9mJ (on), 8.3mJ (off)
- Input Type: Standard
- Gate Charge: 200 nC
- Td (on/off) @ 25°C: 40ns/400ns
- Test Condition: 600V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXYT)
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