J113
onsemi
onsemi
JFET N-CH 35V 625MW TO92-3
$0.44
Available to order
Reference Price (USD)
1+
$0.53000
10+
$0.37100
100+
$0.24350
500+
$0.14386
1,000+
$0.11066
Exquisite packaging
Discount
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onsemi's J113 sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The J113 also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 100 Ohms
- Power - Max: 625 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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