JAN1N5809US
Microchip Technology
Microchip Technology
DIODE GEN PURP 100V 6A B-MELF
$7.98
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Reference Price (USD)
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$9.57100
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Enhance your circuit performance with the JAN1N5809US single rectifier diode from Microchip Technology. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the JAN1N5809US delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Microchip Technology's JAN1N5809US is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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