JAN1N5809US/TR
Microchip Technology
Microchip Technology
UFR,FRR
$8.13
Available to order
Reference Price (USD)
1+
$8.13000
500+
$8.0487
1000+
$7.9674
1500+
$7.8861
2000+
$7.8048
2500+
$7.7235
Exquisite packaging
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Discover the JAN1N5809US/TR single rectifier diode by Microchip Technology, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The JAN1N5809US/TR is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Microchip Technology's JAN1N5809US/TR for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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