Shopping cart

Subtotal: $0.00

JAN1N6625US

Microchip Technology
JAN1N6625US Preview
Microchip Technology
DIODE GEN PURP 1.1KV 1A D5A
$13.65
Available to order
Reference Price (USD)
100+
$15.47000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1100 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C

Related Products

STMicroelectronics

STTH30RQ06GY-TR

Microchip Technology

JANS1N5802/TR

Rectron USA

FR106-T

Central Semiconductor Corp

CMPD1001 BK PBFREE

Rohm Semiconductor

RR264MM-400TFTR

Micro Commercial Co

BAT750-TP

Vishay General Semiconductor - Diodes Division

VS-SD1100C08L

Bourns Inc.

CD214B-S3M

Taiwan Semiconductor Corporation

SR506

Yangzhou Yangjie Electronic Technology Co.,Ltd

GR3K-F1-0000

Top