JAN1N6629U
Microsemi Corporation
Microsemi Corporation
DIODE GEN PURP 800V 1.4A E-MELF
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Maximize your device's efficiency with the JAN1N6629U single rectifier diode from Microsemi Corporation. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The JAN1N6629U is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Microsemi Corporation's JAN1N6629U is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.4A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, E
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 150°C
