JAN2N5015S
Microsemi Corporation
Microsemi Corporation
TRANS NPN 1000V 0.2A TO39
$0.00
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The JAN2N5015S Bipolar Junction Transistor (BJT) by Microsemi Corporation is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the JAN2N5015S provides consistent performance in demanding applications. Choose Microsemi Corporation for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
Related Products
Rohm Semiconductor
2SA1807TLP
onsemi
SS9013HTA
Micro Commercial Co
8550SS-C-BP
Rohm Semiconductor
2SD1857TV2P
Rohm Semiconductor
2SA1585STPQ
onsemi
PZT3904T1
onsemi
2N3906_J18Z
Micro Commercial Co
2SB647L-B-AP
Micro Commercial Co
TIP29B-BP
Toshiba Semiconductor and Storage