JAN2N6250
Microsemi Corporation
Microsemi Corporation
TRANS NPN 275V 10A TO3
$191.10
Available to order
Reference Price (USD)
1+
$191.10000
500+
$189.189
1000+
$187.278
1500+
$185.367
2000+
$183.456
2500+
$181.545
Exquisite packaging
Discount
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Experience unmatched performance with the JAN2N6250 Bipolar Junction Transistor (BJT) by Microsemi Corporation. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the JAN2N6250 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microsemi Corporation for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 275 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
- Power - Max: 6 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
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