JAN2N6301P
Microchip Technology
Microchip Technology
POWER BJT
$39.93
Available to order
Reference Price (USD)
1+
$39.93000
500+
$39.5307
1000+
$39.1314
1500+
$38.7321
2000+
$38.3328
2500+
$37.9335
Exquisite packaging
Discount
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The JAN2N6301P from Microchip Technology is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the JAN2N6301P is a reliable choice for both commercial and industrial use. Trust Microchip Technology to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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