JAN2N6784
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 200V 2.25A TO39
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the JAN2N6784 by Microsemi Corporation, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The JAN2N6784 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Microsemi Corporation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 15W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-39
- Package / Case: TO-205AF Metal Can
Related Products
Infineon Technologies
SIPC30N60CFDX1SA1
Toshiba Semiconductor and Storage
TK2P60D(TE16L1,NV)
IXYS
IXFT26N50Q TR
Microsemi Corporation
JANTX2N6798
Renesas Electronics America Inc
NP40N10VDF-E2-AY
Renesas Electronics America Inc
NP95N03ZUGP-E1
onsemi
FQP19N20-T
IXYS
IXFV30N50PS
Alpha & Omega Semiconductor Inc.
AO6409A_102
Harris Corporation